Abstract: Silicon photonics integration combines the advantages of high optoelectronic rate, low crosstalk, high integration of microelectronics and low cost, which is an important path to break through the bottlenecks of current microelectronic chip performance wall and power consumption wall and realize high-speed information transmission and processing. After more than 20 years of rapid development, optical waveguides, optical modulators, optical detectors, wavesplitter/combiners and other components for silicon photonic chips and their small-scale integration have been basically matured, but high-performance silicon-based light sources have not yet been completely solved. Due to the extremely low luminous efficiency of intrinsic silicon, how to integrate III-V lasers into silicon photonic chips and realize their low-loss coupling with on-chip waveguides is the core problem that needs to be solved urgently. Quantum dot materials have a strong restriction on the three-dimensional direction of the carriers, which makes quantum dot lasers exhibit excellent characteristics such as low power consumption, high operating temperature, high temperature stability, and strong anti-feedback, and are regarded as the mainstream of silicon-based light sources in the future. In this paper, we focus on two types of quantum dot laser schemes, on-chip bonding and heterogeneous integration, as well as three waveguide coupling schemes, photonic lead, end-plane coupling and evanescent wave coupling, for large-scale and high-density silicon photonics integration, in order to provide inspiration for the early completion of the "last piece of the puzzle" in silicon photonics integration of high-performance laser light sources.

Key words: Silicon Photonics Circle, Laser, Quantum Dots, Waveguide Coupling